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Product Description:
Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.
SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates:
Features:
- Both 4H and 6H types are available
- Wafer size up to 4 inches
- Micropipe Density less than 2cm-2 is available upon request
6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION:
| Diameter |
(50.8 ± 0.38) mm |
| Thickness |
(250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm |
| Resistivity (RT) |
>1E5 Ω·cm |
| Surface Roughness |
< 0.5 nm |
| FWHM |
<50 arcsec |
| Micropipe Density |
≤ 10 cm-2 |
| Surface Orientation |
<0001>± 0.5° |
| Primary flat orientation |
{1010} ± 0.5° |
| Primary flat length |
(16 ± 1.7) mm |
| Secondary Flat Orientation |
90° cw. from orientation flat ± 0.5°;
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| Secondary flat length |
(8 ± 1.7) mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 90 % |
| Edge exclusion |
2.0 mm |
2 Inch 6H SEMI-INSULATING SiC wafer in stock, thickness: 0.33mm, one side polished, one side etched PWSC-31B23211($1510.0):
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| Contact us for quantity pricing. |
4H SEMI-INSULATING SIC, 4″WAFER SPECIFICATION:
| Diameter |
(100 ± 0.5) mm |
| Thickness |
(350 ± 25) μm, |
| Resistivity (RT) |
>1E7 Ω·cm |
| Surface Roughness |
< 0.5 nm |
| Micropipe Density |
≤ 50 cm-2 |
| Surface Orientation |
<0001>± 0.5° |
| Primary flat orientation |
{1120} ± 0.5° |
| Primary flat length |
(32.5 ± 2.0) mm |
| Secondary Flat Orientation |
90° cw. from orientation flat ± 0.5°;
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| Secondary flat length |
(18 ± 2.0) mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Edge exclusion |
2.0 mm |
4 Inch 4H SEMI-INSULATING SiC wafer in stock, thickness: 0.5mm, double side polished, PWSC-43K32521($2100.0):
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| Contact us for quantity pricing. |
4H SI-TYPE SIC, 6 inch high purity single crystal silicon carbide wafer, SPECIFICATION:
| Material |
High Purity Single Crystal Silicon Carbide Single-Crystal 4H |
| Orientation |
<0001> On-axis +/-0.5 deg |
| Primary Flat |
Semi Notch @ <10-10> +/-5 deg |
| Diameter |
150.0 +/- 0.2mm |
| Thickness |
500 +/- 25 um |
| TTV |
≤ 10μm |
| WARP |
≤ 40μm |
| Si-face Surface & Roughness |
CMP Epi-ready polish,Ra<0.5nm |
| C-face Surface & Roughness |
Optical polish, Ra<1.0nm |
| Dopant |
High Purity Un-Doped |
| Conduction Type |
Semi insulating-type |
| Resistivity |
>1E8 Ohm.cm |
| Micropipe Density |
≤ 1 cm-2 |
| Edge Exclusion |
≤ 3mm |
| Laser Marking |
C-face |
| Packaging |
Single wafer box or multi wafer box |
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