optics - AIN wafer

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Aluminum Nitride (AIN) Substrate

Product Description:

The aluminum nitride (AlN) ceramic has high thermal conductivity, low dielectric constant excellent mechanical properties, non-toxic, high thermal and chemical resistance. The linear expansion coefficient is similar with silicon.

Specification:

	Material		Aluminum Nitride Substrate
	Surface Roughness (μm)		Ra = 0.02~0.05
	Breakdown Strength (KV/mm)		18.45
	Wrap (Length ‰)		≤ 2
	Volume Resistivity (Ω·cm)		1.4 X 10¹⁴
	Density (g/cm^3)		3.34
	Front Surface Finish		Polished
	Back Surface Finish		Lapped
	Thermal conductivity (W/m.K)		≥ 180
	Thermal expansion (x 10^-6/°C)		2.90
	Dielectric Constant (@1MHz)		8.7
	Flexural Strength		450
	Loss Tangent (X10^-4 @ 1MHz)		5

60X48X2mm, Aluminum Nitride substrates in stock, one side polished, PWAN-1B011 ($65.0):



		contact us for quantity pricing.