optics - Silicon_on

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	Silicon on Sapphire(SOS)
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Silicon on Sapphire

Product Description:

Silicon on Sapphire (SOS) is a type of silicon on insulator (SOI) which is one of the available technologies to fabricate integrated circuits. In SOS, a thin layer of silicon is grown on top of a sapphire substrate. SOI-based devices differ from conventional silicon-built devices by reducing parasitic device capacitance, thereby improving performance.

Specification:

Material	Mono-crystalline Sapphire, high purity (>99.996%)
Thickness	100.0±0.2mm (4 inches)	150.0±0.3mm (6 inches)
Orientation	R-plane (1-102) Tilt 0°±0.1
Thickness	460 / 500 / 530 ± 25um	600 ± 25um
Primary Flat Length	32.5±2.5mm	47.5±2.5mm
Primary Flat Orientation	45°±2° from the projection of the C-axis in the R-plane
TTV	≤15µm	≤20µm
WARP	≤30µm	≤40µm
BOW	≤20µm	≤30µm
Flatness	≤12µm	≤15µm
Front Surface	Epi-Polished (Ra< 0.3nm)
Back Surface	Fine ground (0.4~1.4μm) or Fine-polished Ra<1.0nm
Edge Exclusion	2~3mm	2~3mm
EPI Layer
Thickness	0.1~3.0μm Silicon Epitaxy Layer
Surface Quality	In accordance with SEMI M4-1296
Resistivity	0.1 ~ 100 ohm·cm or >100 ohm·cm
Particulate Density	Particles greater than 2 microns less than 2pcs/cm²

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 600nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310311 ($950.0):



		R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 650nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340712 ($1020.0):



		R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 850nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340812 ($1060.0):



		R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310411 ($1050.0):



		R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340412 ($1160.0):



		R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 3000nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1330612 ($1250.0):



		R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

6 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1420211 ($1300.0):



		R -plane sapphire thickness: 0.60mm. contact us for quantity pricing.

6 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 2300nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1420712 ($1650.0):



		R -plane sapphire thickness: 0.60mm. contact us for quantity pricing.