optics - Germanium on Silicon

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Germanium on Silicon

Product Description:

Germanium on Silicon (GeOSi) is one of the available technologies to fabricate integrated circuits or other applications. For GeOSi wafers, a thin layer of Germanium is grown on top of Si substrate.

Specification:

Material	P-type or N-type Silicon
Diameter	100.0±0.2mm (4 inches)	150.0±0.3mm (6 inches)
Orientation	[100] or others
Thickness	525 ± 25um or others
Primary Flat Length	32.5±2.5mm	47.5±2.5mm
TTV	≤15µm	≤20µm
WARP	≤30µm	≤40µm
BOW	≤20µm	≤30µm
Flatness	≤12µm	≤15µm
Front Surface	Epi-Polished (Ra< 0.3nm)
Back Surface	Fine ground (0.4~1.4μm) or Fine-polished Ra<1.0nm
Edge Exclusion	2~3mm	2~3mm
Ge EPI-film
Thickness	0.1~3.0μm Germanium Epitaxy Layer
Surface Quality	In accordance with SEMI M4-1296
Resistivity	0.1 ~ 100 ohm·cm
Film Thickness Tolerance	±10%

4 Inch Un-doped Germanium on Silicon wafers in stock, Epi layer thickness: 3um, Resistivity: >30 ohm·cm, single side polished, PGOS-231211 ($1150.0):



		Silicon substrate thickness: 0.525mm, P type, <100>, contact us for quantity pricing.

4 Inch Un-doped Germanium on Silicon wafers in stock, Epi layer thickness: 1.0um, Resistivity: >30 ohm·cm, single side polished, PGOS-231111 ($1080.0):



		Silicon substrate thickness: 0.525mm, P type, <100>, contact us for quantity pricing.