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Silicon Carbide Epitaxy

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy: 

We provide custom thin film SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, insulated gate bipolar as well as other applications.

SiC conductive substrates and SiC semi-insulating substrates

We offer 6H and 4H N type conductive SiC substrates and 6H and 4H semi-insulating SiC substrates in different quality grades. Micro-pipe density of less than 2 per cm2 is available upon request.


Materials Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å , c=10.053 Å a=3.073 Å, c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4~5×10-6/K 4~5×10-6/K
Refraction Index no = 2.719, ne = 2.777 no = 2.707, ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/m·K 490 W/m·K
Break-Down Electrical Field 2 ~ 4 · 108 V/m 2 ~ 4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~ 9 ~ 9


Silicon Carbide Epitaxy : 

Polytype 4H
Off-orientation toward <1120> 4 deg-off
Stacking Sequence ABCB
Type n-type
Dopant Nitrogen
Carrier Concentration 5E15 ~ 2E18 cm-3
Uniformity 2 inch< 10%,  3 inch< 20%,  4 inch< 20%
Thickness Range 5-15 μm
Tolerance ± 10%
Uniformity 2 inch< 5%,  3 inch< 7%,  4 inch< 10%
Epi Defects ≤20 cm-2
Roughness ≤2.0nm

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