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Silicon Carbide Conductive Wafers

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates

Features: 

  • Both 4H and 6H types are available
  • Wafer size up to 4 inches
  • Micropipe Density less than 2cm-2 is available upon request

SILICON CARBIDE MATERIAL PROPERTIES: 

Materials Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å , c=10.053 Å a=3.073 Å, c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4~5×10-6/K 4~5×10-6/K
Refraction Index no = 2.719, ne = 2.777 no = 2.707, ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/m·K 490 W/m·K
Break-Down Electrical Field 2 ~ 4 · 108 V/m 2 ~ 4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~ 9 ~ 9

 

6H N-TYPE SIC, 2″WAFER SPECIFICATION: 

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Carrier Type n-type
Resistivity (RT) 0.02 ~ 0.2 Ω·cm
Surface Roughness < 0.5 nm single side polished
FWHM <50 arcsec
Micropipe Density 100 cm-2
Surface Orientation  <0001>± 0.5°
Primary flat orientation   10-10 ± 5°
Primary flat length (16.0 ± 1.7) mm
Primary flat length Si-face:90° cw. from orientation flat ± 5°;  C-face:90° ccw. from orientation flat ± 5°
Surface Finish Single side polished
Packaging Single wafer box or multi wafer box
Usable area 70 %
TTV ≤ 15um

 

6H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-11B22511 ($268.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

6H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 430um thickness, PWSC-11122511 ($330.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

6H N-TYPE SIC, 10X10mm Silicon Carbide WAFER in stock, 340um thickness, PWSC-1AB03221 ($136.0): 

 
 

 
MPD < 5 cm-2, FWHM < 20 arc sec Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 2″WAFER SPECIFICATION: 

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Carrier Type n-type
Resistivity (RT) < 0.1 Ω·cm
Surface Roughness < 0.5 nm (Si-face ); <1 nm (C- face)
FWHM <25 arcsec
Micropipe Density ≤ 15 cm-2
Surface Orientation  <0001> off 4°± 0.5°
Primary flat orientation M-plane (1010) ± 5°
Primary flat length (15.9 ± 1.7) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 5°; 
Secondary flat length (8.0 ± 1.7) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-21B23212 ($586.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 1000um thickness, PWSC-21523212 ($1520.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 8 inch high purity single crystal silicon carbide wafer, SPECIFICATION: 

Material High Purity Single Crystal Silicon Carbide
Single-Crystal 4H
Orientation <0001> Off-axis 4.0 +/-0.5 deg toward <11-20>
Primary Flat Semi Notch @ <10-10> +/-5 deg
Diameter 200.0 +/- 0.2mm
Thickness 500 +/- 25 um
TTV ≤ 15μm
WARP ≤ 60μm
Si-face Surface & Roughness CMP Epi-ready polish,Ra<0.5nm
C-face Surface & Roughness Optical polish, Ra<1.0nm
Dopant Nitrogen
Conduction Type N-type
Resistivity 0.013 ~ 0.028 Ohm.cm
Micropipe Density ≤ 5 cm-2
Edge Exclusion ≤ 4mm
Laser Marking C-face
Packaging Single wafer box or multi wafer box

 

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