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Silicon/silicon dioxide (Si/SiO2) Wafers

Product Description: 

Silicon/silicon dioxide (Si/SiO2) thermal oxide wafers are widely used for FET substrates, surface microscopy analysis as well as other applications. The silicon dioxide layer is formed on silicon wafer surface at a high temperature in the presence of an oxidant.

Besides optical grade silicon wafer, we also offer silicon wafer to SEMI standards for other applications as well.


Crystal Growth Method Czochralski (CZ) or Float Zone (FZ) Method
Orientation <111>, <100> or other Orientations
Diameter 2 Inches, 3 Inches, 4 Inches, 6 Inches
P type Dopant Typical Boron
P type Resistivity Typical 1 ~ 100 ohm/cm
N type Dopant Typical Phosphorus
N type Resistivity Typical 1 ~ 100 ohm/cm
SiO2 thickness Typical 2µm


Silicon/silicon dioxide (Si/SiO2) Wafers: 

3 Inch Si/SiO2 single side polished wafers in stock, 0.38mm thickness, P type, <100> orientation, 2um SiO2 thickness on both sides, PSSS-32O1122 ($62.0): 


Contact us for quantity pricing.








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