Silicon Carbide Epitaxy

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy: 

We provide custom thin film SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, insulated gate bipolar as well as other applications.

SiC conductive substrates and SiC semi-insulating substrates: 

We offer 6H and 4H N type conductive SiC substrates and 6H and 4H semi-insulating SiC substrates in different quality grades. Micro-pipe density of less than 2 per cm2 is available upon request.

SILICON CARBIDE MATERIAL PROPERTIES: 

Silicon Carbide Epitaxy :