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Product Description:
Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.
SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates:
Features:
- Both 4H and 6H types are available
- Wafer size up to 4 inches
- Micropipe Density less than 2cm-2 is available upon request
SILICON CARBIDE MATERIAL PROPERTIES:
| Materials |
Single Crystal 4H |
Single Crystal 6H |
| Lattice Parameters |
a=3.076 Å , c=10.053 Å |
a=3.073 Å, c=15.117 Å |
| Stacking Sequence |
ABCB |
ABCACB |
| Band-gap |
3.26 eV |
3.03 eV |
| Density |
3.21 g/cm3 |
3.21 g/cm3 |
| Therm. Expansion Coefficient |
4~5×10-6/K |
4~5×10-6/K |
| Refraction Index |
no = 2.719, ne = 2.777 |
no = 2.707, ne = 2.755 |
| Dielectric Constant |
9.6 |
9.66 |
| Thermal Conductivity |
490 W/m·K |
490 W/m·K |
| Break-Down Electrical Field |
2 ~ 4 · 108 V/m |
2 ~ 4 · 108 V/m |
| Saturation Drift Velocity |
2.0 · 105 m/s |
2.0 · 105 m/s |
| Electron Mobility |
800 cm2/V·S |
400 cm2/V·S |
| hole Mobility |
115 cm2/V·S |
90 cm2/V·S |
| Mohs Hardness |
~ 9 |
~ 9 |
6H N-TYPE SIC, 2″WAFER SPECIFICATION:
| Diameter |
(50.8 ± 0.38) mm |
| Thickness |
(250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm |
| Carrier Type |
n-type |
| Resistivity (RT) |
0.02 ~ 0.2 Ω·cm |
| Surface Roughness |
< 0.5 nm single side polished
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| FWHM |
<50 arcsec |
| Micropipe Density |
≤ 100 cm-2 |
| Surface Orientation |
<0001>± 0.5° |
| Primary flat orientation |
10-10 ± 5° |
| Primary flat length |
(16.0 ± 1.7) mm |
| Primary flat length |
Si-face:90° cw. from orientation flat ± 5°; C-face:90° ccw. from orientation flat ± 5° |
| Surface Finish |
Single side polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 70 % |
| TTV |
≤ 15um |
6H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-11B22511 ($268.0):
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Contact us for quantity pricing. Customized wafers are welcome
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6H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 430um thickness, PWSC-11122511 ($330.0):
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Contact us for quantity pricing. Customized wafers are welcome
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6H N-TYPE SIC, 10X10mm Silicon Carbide WAFER in stock, 340um thickness, PWSC-1AB03221 ($136.0):
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MPD < 5 cm-2, FWHM < 20 arc sec Contact us for quantity pricing. Customized wafers are welcome
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4H N-TYPE SIC, 2″WAFER SPECIFICATION:
| Diameter |
(50.8 ± 0.38) mm |
| Thickness |
(250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm |
| Carrier Type |
n-type |
| Resistivity (RT) |
< 0.1 Ω·cm |
| Surface Roughness |
< 0.5 nm (Si-face ); <1 nm (C- face) |
| FWHM |
<25 arcsec |
| Micropipe Density |
≤ 15 cm-2 |
| Surface Orientation |
<0001> off 4°± 0.5° |
| Primary flat orientation |
M-plane (1010) ± 5° |
| Primary flat length |
(15.9 ± 1.7) mm |
| Secondary Flat Orientation |
90° cw. from orientation flat ± 5°; |
| Secondary flat length |
(8.0 ± 1.7) mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 90 % |
| Edge exclusion |
1 mm |
4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-21B23212 ($586.0):
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Contact us for quantity pricing. Customized wafers are welcome
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4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 1000um thickness, PWSC-21523212 ($1520.0):
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Contact us for quantity pricing. Customized wafers are welcome
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4H N-TYPE SIC, 3″WAFER SPECIFICATION:
| Diameter |
(76.2 ± 0.38) mm |
| Thickness |
(350 ± 25) μm (430 ± 25) μm |
| Carrier Type |
n-type |
| Dopant |
Nitrogen |
| Resistivity (RT) |
0.012 - 0.0028 Ω·cm |
| Surface Roughness |
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM |
<50 arcsec |
| Micropipe Density |
≤ 50 cm-2 |
| TTV/Bow /Warp |
＜25μm |
| Surface Orientation On axis |
<0001>± 0.5° |
| Surface Orientation Off axis |
4°or 8° toward <11-20>± 0.5° |
| Primary flat orientation |
<11-20>±5.0° |
| Primary flat length |
22.2 mm±3.2mm |
| Primary flat length |
Si-face:90° cw. from orientation flat ± 5°; C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length |
11 ± 1.7 mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 90 % |
| Edge exclusion |
2 mm |
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