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Optical Grade Silicon Wafers

Product Description: 

Although silicon is primarily for semiconductor applications, it is also the most economic IR material. Silicon can produced as either mono or polycrystalline form by Czochralski crystal growth method or float zone method. CZ Silicon is cheaper. But it contains some oxygen that induces an absorption band at 9 microns. Optical grade silicon is generally lightly doped, and has a very good transmission from 1.2um to 7um. Dopant is usually boron (p-type) or phosphorus (n-type), and both types are acceptable for IR applications.

Besides optical grade silicon wafer, we also offer silicon wafer to SEMI standards for other applications as well.

 

 

Figure 1: Optical Grade Silicon Wafers

 

 

Specification: 

Crystal Growth Method Czochralski (CZ) or Float Zone (FZ) Method
Orientation <111>, <100> or Random Orientation
Diameter 2 Inches, 3 Inches, 5 Inches, 6 Inches
P type Dopant Typical Boron
P type Resistivity Typical 5 ~ 100 ohm/cm
N type Dopant Typical Phosphorus
N type Resistivity Typical > 10 ohm/cm
Thickness 500±30µm, 1000±50µm
Surface Quality 80/50

 

Optical Grade Silicon Wafers: 

6 Inch optical grade silicon wafers in stock, 1mm thickness, N type, <111> orientation, CZ Method, PWOS-252211 ($82.5): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 1mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

6 Inch optical grade silicon wafers in stock, 1mm thickness, N type, <100> orientation, CZ Method, PWOS-352211 ($82.5): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 1mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

6 Inch optical grade silicon wafers in stock, 1mm thickness, N type, <100> orientation, FZ Method, PWOS-652211 ($108.0): 

 
 

 
The wafer is produced by FZ method. Both sides are polished and the thickness is 1mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

6 Inch optical grade silicon wafers in stock, 0.9mm thickness, N type, <100> orientation, FZ Method, Resistivity > 1000 ohm/cm, PWOS-654241 ($125.0): 

 
 

 
The wafer is produced by FZ method. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 0.5mm thickness, N type, <100> orientation, CZ Method, PWOS-331211 ($56.0): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 0.5mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 0.3mm thickness, P type, <111> orientation, CZ Method, PWOS-233232 ($52.0): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 0.3mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 0.42mm thickness, N type, <100> orientation, FZ Method, PWOS-636211 ($68.0): 

 
 

 
The wafer is produced by FZ method. Both sides are polished. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 0.47mm thickness, N type, <100> orientation, FZ Method, PWOS-637211 ($68.0): 

 
 

 
The wafer is produced by FZ method. Both sides are polished. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 0.5mm thickness, N type, <100> orientation, FZ Method, PWOS-631221 ($68.0): 

 
 

 
The wafer is produced by FZ method. Both sides are polished and the thickness is 0.5mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

4 Inch optical grade silicon wafers in stock, 1.0mm thickness, N type, <100> orientation, FZ Method, PWOS-632221 ($76.0): 

 
 

 
Both sides are polished. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

3 Inch optical grade silicon wafers in stock, N type, 1.0mm thickness, <111> orientation, CZ Method, PWOS-222211 ($48.0): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 1mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

3 Inch optical grade silicon wafers in stock, N type, 1.0mm thickness, <111> orientation, CZ Method, single side polishd, PWOS-222111 ($42.0): 

 
 

 
The wafer is produced by CZ method. Single side is polished and the thickness is 1mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

3 Inch optical grade silicon wafers in stock, N type, 0.5mm thickness, <111> orientation, CZ Method, PWOS-221211 ($48.0): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 0.5mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

2 Inch optical grade silicon wafers in stock, N type, 1.0mm thickness, <100> orientation, CZ Method, PWOS-312211 ($35.0): 

 
 

 
The wafer is produced by CZ method. Both sides are polished and the thickness is 1.0mm. It has very low optical absorption coefficient. Contact us for quantity pricing.

 

Test/Prime Grade Silicon Wafers for other applications: 

2 Inch prime grade silicon wafers in stock, P type, 279um thickness, <100> orientation, CZ Method, PWMS-310201 ($13.8): 

 
 

 
Resistivity is 0.08~0.12 ohm-cm. Dopant is P/Bo. Contact us for quantity pricing.

2 Inch prime grade silicon wafers in stock, P type, 279um thickness, <111> orientation, CZ Method, PWMS-210201 ($13.8): 

 
 

 
Resistivity is 0.08~0.12 ohm-cm. Dopant is P/Bo. Contact us for quantity pricing.

2 Inch prime grade silicon wafers in stock, P type, 1.0mm thickness,<100> orientation, CZ Method, PWMS-312202 ($15.2): 

 
 

 
Resistivity is 1.2~4.1 ohm-cm. Dopant is P/Bo. Contact us for quantity pricing.

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