optics - Gallium nitride

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Gallium Nitride (GaN) Wafers

Product Description:

Gallium nitride is a binary III/V direct bandgap semiconductor material widely used in bright LED and LD applications, and other electronic devices. Precision Micro-optics can offer GaN substrate with a high crystalline quality and different orientations, Ga and N polar plane, non-polar plane or semi-polar plane. The specification below is one example.

GaN Wafer:

Material	High Purity(>99.996%)and Monocrystaline Bulk GaN
Orientation	On-axis (0001) ± 0.5°
Thickness	300 / 350 ± 25µm
Conduction Type	N-Type
Resistivity	< 0.5 Ohm-cm
Dislocation Density	< 5 × 10⁶ / cm2
TTV	< 15 μm
BOW	< 20μm
Usable Surface Area	> 90%
Front Surface	EPI - Polished, Ga Face
Front Surface Roughness	Ra < 0.3nm
Back Surface	Fine Ground
Back Surface Roughness	~1.0 μm
Package	Class 100 Clean Room

5X5mm GaN Substrate in stock, single side polished, PWBG-1A13111($225.0):



		contact us for quantity pricing.

10.5X10mm GaN Substrate in stock, single side polished, PWBG-1A23111($730.0):



		contact us for quantity pricing.