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(0.9~2.2um)

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(0.9~2.6um)

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InGaAs PIN Photodiodes (0.9~2.6um)(950um)

 

 

Product Features:

  • Highly Reliable Planar Device
  • Low Leakage Current
  • High Shunt Resistance
  • High Responsivity
  • Low Stray Absorption

Applications:

  • Power Monitoring
  • Spectral Analysis
  • Gas Leak Detection
  • Optical Powering

Electrical and Optical Characteristics (T=25ºC):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Spectral Response Range
λ
  900
  2600
nm
Dark Current
ID
VR = 0.5V
  5
15
uA
Shunt Resistance

VR = 10mV
2 10


Responsivity
Re
VR = 0V, λ = 1.9um
1.0

  A/W
VR = 0V, λ = 2.3um 1.1

 
Capacitance
C
f = 1MHz, VR = 0V

450
750 pF
f = 1MHz, VR = 0.5V
150
250
Aperture Size
    Φ950
um
Operating Voltage
Vopr
   
-1
V
Cut-off Frequency
fc
VR = 0.5V, RL = 50Ω, -3dB
10
15   MHz
NEP

VR = 0V, λ = 2.3um

1.5 3 10^-12 W/(Hz)½

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Reverse Voltage
    1
V
  Reverse Current
    1
mA
  Forward Current
    10
mA
  Operating Temperature
-40
  85
°C
  Storage Temperature
-40
  85
°C

Photodiode TO-46-3P Dimensions:

 

Example Curves

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