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InGaAs PIN Photodiodes (950um)

 

 

Product Features:

  • Highly Reliable Planar Device
  • Low Leakage Current
  • High Shunt Resistance
  • High Responsivity
  • Low Stray Absorption

Applications:

  • Power Monitoring
  • Spectral Analysis
  • Light Detection and Ranging (LIDAR)
  • Optical Powering

Electrical and Optical Characteristics (T=25ºC):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Spectral Response Range
λ
  900
  1700
nm
Dark Current
ID
VR = 5V
  1
2
nA
Shunt Resistance

VR = 10mV
50 200


Responsivity
Re
VR = 0V, λ = 850nm
0.1
0.2
  A/W
VR = 0V, λ = 1310nm 0.85
0.90
 
VR = 0V, λ = 1550nm 0.95
1.0
 
Capacitance
C
f = 1MHz, VR = 0V

120
160 pF
f = 1MHz, VR = 5V
60
80
Aperture Size
    Φ950
um
Operating Voltage
Vopr
   
-20
V
Cut-off Frequency
fc
VR = 5V, RL = 50Ω, -3dB
30
40   MHz
Saturation Power

VR = 0V, λ = 1550nm, -0.2dB
5
7   mW
NEP

f = 1KHz,VR = 0V, λ = 1550nm

1.2 2.4 10^-14 W/(Hz)½

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Reverse Voltage
    20
V
  Reverse Current
    10
mA
  Forward Current
    10
mA
  Operating Temperature
-40
  85
°C
  Storage Temperature
-40
  85
°C

 

Chip Dimensions:

 

Photodiode TO-46-3P/ TO-46-5P (Thermoelectric-cooled) Dimensions:

 

Ceramic Package 6CLCC (3.0SQ) Dimensions:

 

Example Curves (See PIN1000)

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