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(0.95~1.65um)

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(0.6~1.7um)

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(0.9~2.2um)

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(0.9~2.6um)

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InGaAs PIN Photodiodes (0.6~1.7um)(455um)

 

 

Product Features:

  • Highly Reliable Planar Device
  • Low Leakage Current
  • High Shunt Resistance
  • High Responsivity
  • Low Stray Absorption

Applications:

  • Power Monitoring
  • Spectral Analysis
  • Light Detection and Ranging (LIDAR)
  • Optical Powering

Electrical and Optical Characteristics (T=25ºC):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Spectral Response Range
λ
  600
  1700
nm
Dark Current
ID
VR = 5V
  0.5
1
nA
Shunt Resistance

VR = 10mV
100 320


Responsivity
Re
VR = 0V, λ = 650nm
0.2
0.3
  A/W
VR = 0V, λ = 850nm 0.35
0.45
 
VR = 0V, λ = 1550nm 0.85
0.95
 
Capacitance
C
f = 1MHz, VR = 0V

35
50 pF
f = 1MHz, VR = 5V
20
25
Aperture Size
    Φ455
um
Operating Voltage
Vopr
   
-10
V
Cut-off Frequency
fc
VR = 5V, RL = 50Ω
80
100   MHz
Saturation Power

VR = 0V, λ = 1550nm, -0.2dB
0.5
1   mW
NEP

f = 1KHz,VR = 0V, λ = 1550nm

1.5 3.0 10^-14 W/(Hz)½

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Reverse Voltage
    10
V
  Reverse Current
    2
mA
  Forward Current
    5
mA
  Operating Temperature
-40
  85
°C
  Storage Temperature
-40
  85
°C

 

Chip Dimensions:

 

Photodiode TO-46-3P Dimensions:

 

Example Curves

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