Product Features:
- Highly Reliable Planar Device
- Low Leakage Current
- High Shunt Resistance
- High Responsivity
- Low Stray Absorption
Applications:
- Power Monitoring
- Spectral Analysis
- Light Detection and Ranging (LIDAR)
- Optical Powering
Electrical and Optical Characteristics (T=25ºC):
Parameters
|
Symbol
|
Test conditions
|
Min
|
Typ |
Max
|
Unit |
Spectral Response Range
|
λ
|
|
900
|
|
1700
|
nm
|
Dark Current
|
ID
|
VR = 5V
|
|
10
|
20
|
nA
|
Shunt Resistance
|
|
VR = 10mV
|
5 |
20
|
|
MΩ
|
Responsivity
|
Re
|
VR = 0V, λ = 850nm
|
0.1
|
0.2
|
|
A/W
|
VR = 0V, λ = 1310nm |
0.85
|
0.90
|
|
VR = 0V, λ = 1550nm |
0.95
|
1.0
|
|
Capacitance
|
C
|
f = 1MHz, VR = 0V
|
|
900
|
1300 |
pF
|
f = 1MHz, VR = 5V |
|
500
|
700 |
Aperture Size
|
|
|
Φ3000
|
um
|
Operating Voltage
|
Vopr
|
|
|
|
-10
|
V
|
Cut-off Frequency
|
fc
|
VR = 5V, RL = 50Ω, -3dB
|
4.5
|
6 |
|
MHz
|
Saturation Power
|
|
VR = 0V, λ = 1550nm, -0.2dB
|
1.5
|
3 |
|
mW
|
NEP
|
|
f = 1KHz,VR = 0V, λ = 1550nm
|
|
4 |
8 |
10^-14 W/(Hz)½
|
Absolute Maximum Ratings (T=25ºC):
|
Parameters
|
Min
|
Typ |
Max
|
Unit |
|
Reverse Voltage
|
|
|
10
|
V
|
|
Reverse Current
|
|
|
10
|
mA
|
|
Forward Current
|
|
|
10
|
mA
|
|
Operating Temperature
|
-40
|
|
85
|
°C
|
|
Storage Temperature
|
-40
|
|
85
|
°C
|
Chip Dimensions:
Photodiode TO-39-3P Dimensions:
Example Curves
|