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(0.95~1.65um)

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(0.6~1.7um)

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(0.9~2.2um)

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(0.9~2.6um)

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InGaAs PIN Photodiodes (0.9~2.2um)(1850um)

 

 

Product Features:

  • Highly Reliable Planar Device
  • Low Leakage Current
  • High Shunt Resistance
  • High Responsivity
  • Low Stray Absorption

Applications:

  • Power Monitoring
  • Spectral Analysis
  • Light Detection and Ranging (LIDAR)
  • Optical Powering

Electrical and Optical Characteristics (T=25ºC):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Spectral Response Range
λ
  900
  2200
nm
Dark Current
ID
VR = 0.5V
  10
20
uA
Shunt Resistance

VR = 10mV
5 10


Responsivity
Re
VR = 0V, λ = 1550nm
0.9
0.95
  A/W
VR = 0V, λ = 1900nm 1.0
1.05
 
Capacitance
C
f = 1MHz, VR = 0V

1800
2300 pF
f = 1MHz, VR = 0.5V
1400
1800
Aperture Size
    Φ1850
um
Operating Voltage
Vopr
   
-1.0
V
Cut-off Frequency
fc
VR = 0.5V, RL = 50Ω
1.5
2   MHz
Saturation Power

VR = 0V, λ = 1550nm, -0.2dB
0.5
1.0   mW
NEP

f = 1KHz,VR = 0V, λ = 1900nm

6.0 10.0 10^-12 W/(Hz)½

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Reverse Voltage
    1.0
V
  Reverse Current
    10
mA
  Forward Current
    10
mA
  Operating Temperature
-40
  85
°C
  Storage Temperature
-40
  85
°C
  TEC Current
    0.9
A

 

Chip Dimensions:

 

Photodiode TO-39-3P/ TO-39-8P (Thermoelectric-cooled) Dimensions:

 

 

Example Curves

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