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InGaAs PIN Photodiodes (1850um)

 

 

Product Features:

  • Highly Reliable Planar Device
  • Low Leakage Current
  • High Shunt Resistance
  • High Responsivity
  • Low Stray Absorption

Applications:

  • Power Monitoring
  • Spectral Analysis
  • Light Detection and Ranging (LIDAR)
  • Optical Powering

Electrical and Optical Characteristics (T=25ºC):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Spectral Response Range
λ
  900
  1700
nm
Dark Current
ID
VR = 5V
  5
10
nA
Shunt Resistance

VR = 10mV
10 40


Responsivity
Re
VR = 0V, λ = 850nm
0.1
0.2
  A/W
VR = 0V, λ = 1310nm 0.85
0.90
 
VR = 0V, λ = 1550nm 0.95
1.0
 
Capacitance
C
f = 1MHz, VR = 0V

400
800 pF
f = 1MHz, VR = 5V
200
400
Aperture Size
    Φ1850
um
Operating Voltage
Vopr
   
-15
V
Cut-off Frequency
fc
VR = 5V, RL = 50Ω, -3dB
8
15   MHz
Saturation Power

VR = 0V, λ = 1550nm, -0.2dB
2
4   mW
NEP

f = 1KHz,VR = 0V, λ = 1550nm

2.4 4.8 10^-14 W/(Hz)½

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Reverse Voltage
    15
V
  Reverse Current
    10
mA
  Forward Current
    10
mA
  Operating Temperature
-40
  85
°C
  Storage Temperature
-40
  85
°C

 

Chip Dimensions:

 

Photodiode TO-39-3P Dimensions:

 

Photodiode TO-39-8P (Thermoelectric-cooled) Dimensions:

 

Ceramic Package 8CLCC (5.0SQ) Dimensions:

 

Example Curves (See PIN2000)

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