|
Product Features:
- Highly Reliable Planar Device
- Low Leakage Current and Noise
- >700MHz 3dB Bandwidth
- High Responsivity in 0.95~1.65um
- Low Stray Absorption
Applications:
- Power Monitoring
- Spectral Analysis
- Light Detection and Ranging (LIDAR)
- Optical Powering
Electrical and Optical Characteristics (T=25ºC):
Parameters
|
Symbol
|
Test conditions
|
Min
|
Typ |
Max
|
Unit |
Spectral Response Range
|
λ
|
|
950
|
|
1650
|
nm
|
Dark Current
|
ID
|
M = 10
|
|
5
|
50
|
nA
|
Useable Gain
|
|
λ = 1550nm
|
10 |
20
|
|
|
Responsivity
|
Re
|
M = 10, λ = 1550nm
|
8
|
9
|
|
A/W
|
Capacitance
|
C
|
f = 1MHz, M = 10
|
|
2.5
|
3.0 |
pF
|
Aperture Size
|
|
|
Φ200
|
um
|
Operating Voltage
|
Vopr
|
M = 10 |
32 |
|
50
|
V
|
| 3dB Bandwidth (for Chip) |
f3dB
|
M = 10, RL = 50Ω, λ = 1550nm
|
0.7 |
0.85 |
|
GHz
|
| 3dB Bandwidth (for TO-46) |
M = 10, RL = 50Ω, λ = 1550nm
|
0.8 |
1 |
|
Breakdown Voltage
|
VBD
|
IBD = 100uA
|
35
|
|
55 |
V
|
Temperature Coefficient of VBD
|
|
|
|
0.1 |
0.15 |
V/°C
|
Spectral Noise Current
|
|
f = 1MHz,M = 10
|
|
0.5 |
1.5 |
pA/(Hz)½
|
Absolute Maximum Ratings (T=25ºC):
| |
Parameters
|
Min
|
Typ |
Max
|
Unit |
| |
Reverse Current
|
|
|
1
|
mA
|
| |
Forward Current
|
|
|
5
|
mA
|
| |
Operating Temperature
|
-40
|
|
85
|
°C
|
| |
Storage Temperature
|
-40
|
|
85
|
°C
|
| |
TEC Current
|
|
|
0.65
|
A
|
Bare Chip and Ceramic Package Dimensions:
Photodiode TO-46-3P/ TO-46-5P (Thermoelectric-cooled) Dimensions:
Example Curves
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