Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
Spectrometers
Wafers
  Sapphire Wafer
  Patterned Sapphire Wafer
  ZnO Wafers Substrate
  AIN Wafers Substrate
  Gallium Arsenide Wafer
  Gallium Nitride Wafer
  Silicon Carbide Wafer
  Lithium Niobate Wafer
  Black Lithium Niobate Wafer
  MgO:Lithium Niobate Wafer
  Lithium Tantalate Wafer
  Black Lithium Tantalate Wafer
  Si/SiO2 Wafer
  Optical Grade Silicon Wafer
  Optical Grade Ge Wafer
  Optical substrate
  Silicon on Sapphire(SOS)
  Germanium on Silicon(GeOSi)
  Silicon on Insulator (SOI)
  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Silicon on Sapphire

Product Description: 

Silicon on Sapphire (SOS) is a type of silicon on insulator (SOI) which is one of the available technologies to fabricate integrated circuits. In SOS, a thin layer of silicon is grown on top of a sapphire substrate. SOI-based devices differ from conventional silicon-built devices by reducing parasitic device capacitance, thereby improving performance.

Specification: 

Material Mono-crystalline Sapphire, high purity (>99.996%)
Thickness 100.0±0.2mm (4 inches) 150.0±0.3mm (6 inches)
Orientation  R-plane (1-102) Tilt 0°±0.1
Thickness 460 / 500 / 530 ± 25um 600 ± 25um
Primary Flat Length 32.5±2.5mm
47.5±2.5mm
Primary Flat Orientation 45°±2° from the projection of the C-axis in the R-plane
TTV ≤15µm ≤20µm
WARP ≤30µm ≤40µm
BOW ≤20µm ≤30µm
Flatness ≤12µm ≤15µm
Front Surface Epi-Polished (Ra< 0.3nm)
Back Surface Fine ground (0.4~1.4μm) or Fine-polished Ra<1.0nm
Edge Exclusion 2~3mm
2~3mm
EPI Layer
Thickness 0.1~3.0μm Silicon Epitaxy Layer
Surface Quality In accordance with SEMI M4-1296
Resistivity 0.1 ~ 100 ohm·cm or >100 ohm·cm
Particulate Density Particles greater than 2 microns less than 2pcs/cm2

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 600nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310311 ($950.0): 

 
 

 
R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 650nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340712 ($1020.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 850nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340812 ($1060.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310411 ($1050.0): 

 
 

 
R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340412 ($1160.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 3000nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1330612 ($1250.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

6 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1420211 ($1300.0): 

 
 

 
R -plane sapphire thickness: 0.60mm. contact us for quantity pricing.

 

6 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 2300nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1420712 ($1650.0): 

 
 

 
R -plane sapphire thickness: 0.60mm. contact us for quantity pricing.

 

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.